Electrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layers
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United States of America Patent
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May 12, 1998
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N/A
app pub date -
Nov 26, 1996
filing date -
Nov 26, 1996
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Abstract
An electrically erasable and programmable read only memory (EEPROM) includes an array of trench memory cells, with each memory cell having a semiconductor drain region adjacent a surface-adjoining portion of the trench. The EEPROM is provided with at least two overlapping metallization layers overlying the memory cells and separated from each other and from the trenches and the drain regions by regions of insulating material. The overlapping metallization layers contact the drain regions of the underlying memory cells through the insulating material. This configuration results in a memory array having a very high packing density.
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