Back-biasing in asymmetric MOS devices
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United States of America Patent
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May 19, 1998
Grant Date -
N/A
app pub date -
Oct 16, 1995
filing date -
Oct 16, 1995
priority date (Note) -
In Force
status (Latency Note)
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Abstract
An adjustable threshold voltage MOS device having an asymmetric pocket region is disclosed herein. The pocket region abuts one of a source or drain proximate the device's channel region. The pocket region has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. An MOS device having such pocket region may have its threshold voltage adjusted by applying a potential directly to its pocket region. This capability is realized by providing a contact or conductive tie electrically coupled to the pocket region. This 'pocket tie' is also electrically coupled to a metallization line (external to the device) which can be held at a specified potential corresponding to a potential required to back-bias the device by a specified amount.
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