Temperature sensing methods and apparatus
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United States of America Patent
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May 26, 1998
Grant Date -
N/A
app pub date -
Apr 25, 1996
filing date -
Apr 26, 1995
priority date (Note) -
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Abstract
This invention relates to apparatus for sensing, remotely, the temperature of a semi-conductor wafer and includes means for shining a single frequency light 11 onto the surface 12 of a semi-conductor wafer 13 so that some of that light is scattered. The scattered light is focused by a lens 15 and the single frequency is filtered out of the scattered light by notch filter 17. The filtered beam is split by beam splitter 18 and the resultant two beams are filtered so that they respectively pass only the Stokes and anti-Stokes frequencies respectively. The intensities of these respective light beams are then measured and from these the temperature of the semi-conductor wafer is calculated.
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