Method for post-etching of metal patterns
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United States of America Patent
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May 26, 1998
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app pub date -
Jan 24, 1997
filing date -
Jan 24, 1997
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Abstract
An improved process is described for the post-etching treatment after subtractive etching of aluminum and aluminum-alloy layers in the fabrication of semiconductor integrated circuit devices. The improvement consists of in situ exposure immediately after subtractive etching of the metal pattern to a reactive plasma sustained in a mixture of oxygen and carbon tetrafluoride gases by continuous radiofrequency power input for a controlled period of time.
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