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Abstract

A semiconductor device isolating method is disclosed which may include the steps of: forming a buffer layer and an insulating layer on a semiconductor substrate, and etching to remove partially the insulating layer so as to form an opening corresponding to the device isolating region; forming hemispherical polysilicon patterns on the whole surface of the substrate; removing the buffer layer exposed between the HSG-Si patterns on the bottom of the opening, and dry-etching the resultant exposed silicon regions to form a plurality of trenches and silicon poles with a certain depth and length; forming an oxide layer on the inside of the trench, and filling the interior of the trench with polysilicon; and oxidizing the polysilicon filled in the trench to form a device isolating region.

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First Claim