Method of formation of polycide in a semiconductor IC device
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United States of America Patent
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May 26, 1998
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N/A
app pub date -
Jan 22, 1997
filing date -
Jan 22, 1997
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Abstract
An method for the formation of polycide used for the gate electrode or interconnection metallization in semiconductor integrated circuit devices has been developed. The polycide is formed from doped amorphous silicon deposited from SiH.sub.4 and PH.sub.3 and tungsten silicide deposited from dichlorosilane (SiH.sub.2 Cl.sub.2 and WF.sub.6, followed by conventional RIE patterning. The key feature, annealing of the polycide structure by a combination of RTA (Rapid Thermal Anneal) in a nitrogen ambient, and then a furnace anneal in an oxygen ambient prevents deleterious sidewall growth on the polycide structure and results in a highly manufacturable process having high yield.
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