Infrared photodetector using delta-doped semiconductors
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United States of America Patent
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May 26, 1998
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N/A
app pub date -
Aug 22, 1995
filing date -
Mar 17, 1993
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Abstract
An infrared photodetector using .delta.-doped semiconductors capable of reducing the requirement to form a quantum well structure of high quality, reducing the need of a cooling device due to the operation at the room temperature, and controlling the wavelength of infrared ray detected by controlling the .delta.-doped concentration. The infrared photodetector includes a semiconductor substrate, an active layer formed over the semiconductor substrate, .delta.-doped layers formed in the active layer, the .delta.-doped layer having a doping concentration controlled for controlling a wavelength of infrared ray detected, a current injection layer formed over the active layer, a cap layer formed over the current injection layer, and an electrode formed on the cap layer.
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