Semiconductor device with improved turn-off capability
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United States of America Patent
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May 26, 1998
Issued Date -
N/A
app pub date -
Jul 15, 1994
filing date -
Dec 16, 1981
priority date (Note) -
Expired
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Abstract
A four-region semiconductor device (that is, a p-n-p-n or n-p-n-p device) including at least one further region utilizes integral FET structure for diverting carriers away from an interior region of the device and shunting them to a main current-carrying electrode of the device, whereby the device is provided with a turn-off capability. The device requires only a small amount of energy for its turn-off control gate, and utilizes a high percentage of its semiconductor body for carrying current through the device. High speed turn-off is achieved in a particular embodiment of the device.
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