Thin film strained layer ferroelectric capacitors

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United States of America Patent

PATENT NO 5760432
SERIAL NO

08418299

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Abstract

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A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the dielectric properties. A second electrode is placed on the dielectric layer.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
KABUSHIKI KAISHA TOSHIBATOKYO19957

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Kazuhide Kanagawa-ken, JP 95 1322
Eguchi, Kazuhiro Kanagawa-ken, JP 71 865
Kawakubo, Takashi Kanagawa-ken, JP 82 1566
Komatsu, Shuichi Kanagawa-ken, JP 20 391

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