Refractory metal-titanium nitride conductive structures
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United States of America Patent
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Jun 2, 1998
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N/A
app pub date -
Nov 14, 1994
filing date -
Mar 30, 1987
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Abstract
The present invention provides a conductive structure for use in semiconductor devices. The structure can be used to interconnect the various diffusion regions or electrodes of devices formed on a processed semiconductor substrate to a layer of metal, to interconnect overlying layers of metal or to provide the gate electrode of an FET device formed on the surface of a semiconductor substrate. Various embodiments of the invention are described, but in broad form the active metallurgy of the present invention comprises a thin continuous layer to titanium--titanium nitride and a thick layer of a refractory metal, e.g. tungsten, overlying the titanium nitride layer.
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