Pyrolytic boron nitride crucible
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United States of America Patent
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Jun 9, 1998
Grant Date -
N/A
app pub date -
Feb 3, 1997
filing date -
Feb 15, 1996
priority date (Note) -
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Abstract
A pyrolytic boron nitride crucible is disclosed which is suitable for producing a single crystal of a semiconductor compound of Group III and V by the LEC method. The crucible comprises a side part and a bottom part. The bottom part has an absorption coefficient of light of wavelengths between 3,700 cm.sup.-1 and 6,500 cm.sup.-1 of at most 1.7 and/or the absorption coefficient of light of wavelengths between 3,700 cm.sup.-1 to 6,500 cm.sup.-1 of the bottom part is less than that of the side part by at least 0.5. In the crucible, the heat conduction from the bottom part to material melt in the crucible is strengthened, so that the convection flow of the material melt is suppressed and the temperature distribution in the crucible can be easily controlled.
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