Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers
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United States of America Patent
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Jun 9, 1998
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app pub date -
May 8, 1996
filing date -
May 8, 1996
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Abstract
A method of stabilizing a halogen-doped silicon oxide film to reduce halogen atoms migrating from said film during subsequent processing steps. A halogen-doped film is deposited over a substrate and then subjected to a degassing step in which the film is briefly heated to a temperature of between about 300.degree. and 550.degree. C. before deposition of a diffusion barrier layer. It is believed that such a heat treatment step removes loosely bonded halogen atoms from the halogen-doped film and thus the treatment is referred to as a degassing step. In a preferred version of this embodiment, the halogen-doped silicon oxide film is an FSG film that is subjected to a degassing treatment for between about 35 and 50 seconds.
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