Process of fabricating a thermoelectric module formed of V-VI group compound semiconductor including the steps of rapid cooling and hot pressing
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 9, 1998
Grant Date -
N/A
app pub date -
Mar 3, 1997
filing date -
Mar 4, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A process wherein powder of p/n-type semiconductor thermoelectric materials expressed as (Bi, Sb).sub.2 (Te, Se).sub.3 is hot pressed under the pressure equal to or greater than 400 kgf/cm.sup.2 at 200 degrees to 400 degrees in centigrade for a time period between {(-T/5)+90} minutes and 150 minutes or at 400 degrees to 500 degrees in centigrade for a time period between 5 minutes and 150 minutes so as to increase the figure of merit by virtue of the strain left in the crystal and/or micro crystal grain, and pieces of p/n-type semiconductor thermoelectric material are assembled with electrodes so as to obtain a thermoelectric module for a high thermoelectric conversion efficiency.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully