Importance

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Abstract

There is provided a component for an electronic package and a method for the manufacture of that component. The component has a metallic substrate with a surface coated by a dielectric. A centrally disposed cavity extends through the dielectric into the metallic substrate to a depth, D.sub.1. Circumscribing and abutting this cavity is an annular channel having a depth D.sub.2 that is less than D.sub.1. A semiconductor device bonded to the base of the cavity is electrically interconnected to both circuit traces formed on the dielectric coating and to the annular channel. A method of forming the annular channel is to mechanically mill a precursor annular channel having an outer wall a desired distance from the sidewalls of the metallic substrate and a width substantially greater than the desired width of the annular channel. A cavity is then formed in the region circumscribed by the outer wall of the precursor annular channel. The perimeter of this cavity approaches the outer wall of the precursor annular channel, terminating a desired distance from the outer wall such that that portion of the annular channel having a depth D.sub.2 is a desired width, typically less than 0.015 inch.

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First Claim