Method for forming interconnection in semiconductor pattern device
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United States of America Patent
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Jun 16, 1998
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N/A
app pub date -
Jan 3, 1997
filing date -
Aug 26, 1996
priority date (Note) -
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Abstract
A method for forming an interconnection pattern in a semiconductor device for reducing metallic reflection, includes the steps of forming a conductive layer on a substrate, polishing the conductive layer to form a rugged surface on the conductive layer, and selectively removing the polished conductive layer to form the interconnection pattern.
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