Silicon nitride ceramic and process for forming the same
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United States of America Patent
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Jun 16, 1998
Grant Date -
N/A
app pub date -
Apr 10, 1996
filing date -
Oct 4, 1994
priority date (Note) -
Expired
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Abstract
There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.
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- 15 United States
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- 2 Other
Patent Owner(s)
- AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH;SUMITOMO ELECTRIC INDUSTRIES, LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kondoh, Naoki | Aichi, JP | 2 | 56 |
Nishioka, Takao | Hyogo, JP | 54 | 545 |
Obata, Yoshihiro | Aichi, JP | 11 | 440 |
Wakai, Fumihiro | Gifu, JP | 5 | 99 |
Yamakawa, Akira | Hyogo, JP | 102 | 1102 |
Yoshimura, Masashi | Hyogo, JP | 89 | 618 |
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