Importance

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Abstract

A probe, a method of making the same, and a manner of using the same, suitable for 'Metal-Oxide-Semiconductor (MOS) like' electrical characterization measurements on semiconductor substrates having overlying dielectric layers is disclosed. The probe comprises an electrically conductive probe needle, the needle having a rounded tip end of a first radius, the rounded tip end further being suitable for undergoing a plastic deformation. The needle is positioned above the dielectric layer on the semiconductor substrate and the needle tip forced down onto the smooth surface of the dielectric layer in a controlled manner for causing the needle tip to undergo a plastic deformation in which an outer portion of the rounded tip end is maintained at the first radius and an inner portion of the rounded tip end is increased to a second radius, the second radius being larger than the first. During use, the plastically deformed, conditioned probe optimally achieves a highly conformal, intimate, and well-defined contact area needed for accurate electrical characterization measurements, wherein the silicon elastically conforms to the conditioned probe in contrast to similar electrical characterization measurement techniques involving the elastic conformation of a probe tip to the silicon.

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First Claim