US Patent No: 5,768,191

Number of patents in Portfolio can not be more than 2000

Methods of programming multi-state integrated circuit memory devices

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Abstract

Methods of programming multi-state memory devices include the steps of programming a nonvolatile multi-state memory cell (e.g., EEPROM) from a reference state (e.g., erased state) towards a first program state, by applying a first program voltage (V.sub.pgm) thereto. The first program voltage is preferably applied for a first predetermined time interval so that sufficient Fowler-Nordheim tunneling of electrons can occur into the cell's floating gate to cause a shift in the cell's threshold voltage from the reference state (e.g., Vth=-2 V) to a first program state (e.g., -1 V.ltoreq.Vth.ltoreq.-0.5). To verify the step of programming the memory cell into the first program state, a operation is performed by a sense amplifier to sense a first state of the memory cell, upon application of a first reference voltage thereto. Once verification of the first program state has been achieved, another programming step may be performed to program the memory cell from the first program state to a second program state, by applying a second program voltage thereto and then sensing a second state of the memory cell upon application of a second reference voltage thereto (e.g., V.sub.pref2 >V.sub.pref1). For example, the second program voltage (V.sub.pgm) is preferably applied for a second predetermined time interval so that sufficient additional Fowler-Nordheim tunneling of electrons can occur into the cell's floating gate to cause a shift in the cell's threshold voltage from the first program state (e.g., Vth=-1 V) to the second program state (e.g., 0 V.ltoreq.Vth.ltoreq.0.5 V).

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO45244

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Young-Joon Seongnam-si, KR 67 344
Suh, Kang-Doeg Kyungki-do, KR 2 112

Cited Art

Patent Info (Count) # Cites Year
 
INTEL CORPORATION (5)
5,523,972 Method and apparatus for verifying the programming of multi-level flash EEPROM memory 170 1994
5,539,690 Write verify schemes for flash memory with multilevel cells 192 1994
5,541,886 Method and apparatus for storing control information in multi-bit non-volatile memory arrays 192 1994
5,566,125 Method and circuitry for storing discrete amounts of charge in a single memory element 126 1995
5,546,042 High precision voltage regulation circuit for programming multiple bit flash memory 77 1995
 
SANDISK TECHNOLOGIES INC. (2)
5,163,021 Multi-state EEprom read and write circuits and techniques 384 1991
5,583,812 Flash EEPROM system cell array with more than two storage states per memory cell 151 1995
 
BTG INTERNATIONAL INC. (1)
5,394,362 Electrically alterable non-voltatile memory with N-bits per memory cell 138 1993
 
FIDELIX CO., LTD. (1)
5,566,111 Method for programming a nonvolatile memory 41 1995
 
PEGERE SEMICONDUCTORS, LLC (1)
5,450,341 Non-volatile semiconductor memory device having memory cells, each for at least three different data writable thereinto selectively and a method of using the same 85 1994

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
SOLID STATE STORAGE SOLUTIONS, INC. (29)
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6,111,790 Non-volatile memory device and refreshing method 6 1999
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6,256,230 Nonvolatile memory device and refreshing method 9 2000
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6,850,434 Clock synchronized nonvolatile memory device 4 2004
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7,327,604 Clock synchronized non-volatile memory device 2 2006
7,542,339 Clock synchronized non-volatile memory device 0 2007
 
KABUSHIKI KAISHA TOSHIBA (10)
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7,071,771 Current difference divider circuit 8 2004
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SANDISK TECHNOLOGIES INC. (10)
6,967,872 Method and system for programming and inhibiting multi-level, non-volatile memory cells 46 2001
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ROUND ROCK RESEARCH, LLC (7)
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SAMSUNG ELECTRONICS CO., LTD. (7)
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SPANSION LLC (7)
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7,838,342 Memory device and method 0 2008
7,830,716 Non-volatile memory string module with buffer and method 0 2008
 
MICRON TECHNOLOGY, INC. (6)
6,366,496 Method for programming multi-level non-volatile memories by controlling the gate voltage 67 2000
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RENESAS ELECTRONICS CORPORATION (6)
5,959,882 Nonvolatile semiconductor memory device and data writing method therefor 30 1997
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SOLID STATE STORAGE SOLUTIONS LLC (5)
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7,038,944 Non-volatile memory device 0 2004
7,515,467 Method of programming a semiconductor nonvolatile memory cell and memory with multiple charge traps 3 2007
 
SANDISK CORPORATION (2)
7,266,017 Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system 7 2001
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ARTEMIS ACQUISITION LLC (1)
7,522,455 Method and system for reducing soft-writing in a multi-level flash memory 1 2005
 
BTG INTERNATIONAL INC. (1)
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6,327,186 Non-volatile semiconductor memory including memory cells having different charge exchange capability 2 1999
 
HYNIX SEMICONDUCTOR INC. (1)
7,948,805 Method of programming a multi level cell 0 2010
 
MACRONIX INTERNATIONAL CO., LTD. (1)
6,046,934 Method and device for multi-level programming of a memory cell 8 1999
 
NEC ELECTRONICS CORPORATION (1)
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SHARP KABUSHIKI KAISHA (1)
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WINBOND ELECTRONICS CORP. (1)
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OTHER [CHECK PATENT PROFILE FOR ASSIGNMENT INFORMATION] (1)
7,656,710 Adaptive operations for nonvolatile memories 10 2005