Process for the vapor phase synthesis of diamond and highly crystalline diamond
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United States of America Patent
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Jul 7, 1998
Issued Date -
N/A
app pub date -
Mar 9, 1995
filing date -
Dec 26, 1988
priority date (Note) -
Expired
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Abstract
High quality diamond excellent in crystalline property as well as transparency, can be synthesized at a high growth speed by a process which comprises using, as a raw material gas, a mixed gas of hydrogen gas A, an inert gas B, a carbon atom-containing gas C and an oxygen atom-containing inorganic gas D in such a proportion as satisfying the following relationship by mole ratio: 0.001.ltoreq.B/(A+B+C+D).ltoreq.0.95 0.001.ltoreq.C/(A+B+C+D).ltoreq.0.1 0.0005.ltoreq.D/C.ltoreq.10 except that the carbon atom-containing gas C and the oxygen atom-containing inorganic gas D, cannot simultaneously be the same gas feeding the mixed gas into a reactor in which plasma is then formed by applying a DC or AC electric field at a pressure of 10 to 760 torr and thereby depositing and forming diamond on a substrate arranged in the reactor.
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