Fabrication of metal-ferroelectric-metal capacitors with a two step patterning sequence

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 5789323
SERIAL NO

08428544

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Abstract

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A method of fabricating a metal-ferroelectric-metal ('MFM') capacitor includes the steps of depositing a silicon dioxide layer on a silicon or other substrate, a lower platinum or other noble metal electrode, a PZT or other ferroelectric material dielectric layer, and an upper platinum or other noble metal electrode. The upper electrode and ferroelectric dielectric layer are patterned and etched according to a first pattern corresponding to the final dimensions of the ferroelectric dielectric layer. The upper electrode and lower electrode are subsequently patterned and etched according to a second pattern corresponding to the final dimensions of one or more upper electrodes and the final extent of the lower electrode. The second etching step leaves a benign vestigial upper electrode feature. An oxide layer is finally deposited over the entire surface of the MFM capacitor structure, which is etched and metalized over desired upper and lower electrode contacts.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
RAMTRON INTERNATIONAL CORPORATIONCOLORADO SPRINGS, CO5

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Taylor, Thomas C Colorado Springs, CO 32 397

Cited Art Landscape

Patent Info (Count) # Cites Year
 
YAMAHA CORPORATION (1)
* 5618749 Method of forming a semiconductor device having a capacitor and a resistor 51 1995
 
FREESCALE SEMICONDUCTOR, INC. (1)
* 5439840 Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric 42 1993
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
Ultrasource, Inc. (8)
* 6998696 Integrated thin film capacitor/inductor/interconnect system and method 8 2003
* 2004/0080,021 Integrated thin film capacitor/inductor/interconnect system and method 15 2003
7327582 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2005/0175,938 Integrated thin film capacitor/inductor/interconnect system and method 3 2005
7425877 Lange coupler system and method 1 2005
* 2005/0162,236 Lange coupler system and method 2 2005
7446388 Integrated thin film capacitor/inductor/interconnect system and method 6 2005
* 2006/0097,344 Integrated thin film capacitor/inductor/interconnect system and method 0 2005
 
MICRON TECHNOLOGY, INC. (2)
7157761 Capacitor with noble metal pattern 0 2002
6660620 Method of forming noble metal pattern 1 2002
 
RENESAS ELECTRONICS CORPORATION (2)
* 6057081 Process for manufacturing semiconductor integrated circuit device 26 1997
* 6497992 Process for manufacturing semiconductor integrated circuit device 15 2000
 
APPLIED MATERIALS, INC. (2)
6943039 Method of etching ferroelectric layers 5 2003
* 2004/0157,459 Method of etching ferroelectric layers 1 2003
 
SAMSUNG ELECTRONICS CO., LTD. (1)
6475911 Method of forming noble metal pattern 9 2000
 
ATLANTIC INERTIAL SYSTEMS LIMITED (1)
* 6471883 Method of manufacturing a vibrating structure gyroscope 2 1999
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
6465321 Method of forming a storage node in a semiconductor device 1 2000
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
* 6974547 Flexible thin film capacitor and method for producing the same 3 2000
* Cited By Examiner