Light emitting diode having transparent conductive oxide formed on the contact layer
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United States of America Patent
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Aug 4, 1998
Grant Date -
N/A
app pub date -
Jun 23, 1997
filing date -
Jun 23, 1997
priority date (Note) -
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Abstract
A structure of a light emitting diode (LED) having high brightness is disclosed. This LED includes a substrate formed on a first electrode, a first cladding layer of a first conductivity type formed on the substrate, an active layer formed on the first cladding layer, a second cladding layer of a second conductivity type formed on the active layer, a window layer of the second conductivity type formed on the second cladding layer, wherein the electrical resistivity of the window layer is less than the electrical resistivity of the second cladding layer, a contact layer of the second conductivity type formed on the window layer for providing ohmic contact, a conductive transparent oxide layer formed on the contact layer, and a current blocking region formed in the LED. The current blocking region is approximately aligned with a second electrode, and can be the contact layer having a hollow portion therein, an insulating region formed on the contact layer, an ion implanted region in the contact layer and the window layer, or a diffused region in the contact layer and the window layer.
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