Varactor with electrostatic barrier
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United States of America Patent
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Aug 4, 1998
Grant Date -
N/A
app pub date -
Nov 9, 1995
filing date -
Nov 9, 1995
priority date (Note) -
Expired
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Abstract
A varactor comprising a substrate of semiconductor material on which is grown both an electrostatic barrier having a first layer of material doped with donor impurities and a second layer of material doped with acceptor impurities and a depletable layer. In other embodiments of the present invention varactors are provided that include a plurality of barrier and depletable layer pairs grown in a serial arrangement.
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