High temperature electrode-barriers for ferroelectric and other capacitor structures
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United States of America Patent
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Aug 4, 1998
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N/A
app pub date -
Dec 6, 1996
filing date -
Dec 6, 1996
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Abstract
A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.
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