Remover solution composition for resist and method for removing resist using the same
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United States of America Patent
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Aug 11, 1998
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N/A
app pub date -
Nov 13, 1996
filing date -
Nov 13, 1995
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Expired
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Abstract
A remover solution composition for resist which comprises (a) a salt of hydrofluoric acid with a metal-free base, (b) a water-soluble organic solvent, and (c) water and optionally (d) an anticorrosive, and has a pH of 5 to 8. A method for removing resist which comprises the steps of (I) forming a resist layer on a substrate having a metal film, (II) light-exposing the resist layer through a mask pattern and subsequently developing the resist layer to form a resist pattern, and (III) dry-etching the substrate using the resist pattern as a mask and then removing the unnecessary resist and modified resist film with the remover solution composition.
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