Microelectronic vacuum triode structure and method of fabrication
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United States of America Patent
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Aug 11, 1998
Issued Date -
N/A
app pub date -
Mar 10, 1995
filing date -
Aug 4, 1992
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An improved vacuum microelectronic device comprised of a first polysilicon layer having hornlike protrusions forming the emitter of the device, a first insulating layer separating the first polysilicon layer from a second polysilicon layer forming the grid of the device; a second insulating layer separating the second and third polysilicon layers. A portion of the first insulating layer, the second polysilicon layer, and second insulating layers are removed to form a grid aperture region positioned directly above the hornlike protrusion of the emitter. A cavity exists between the grid aperture region and a third polysilicon layer. The cavity is evacuated to form the vacuum region of the device.
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