Manufacture of electron emitter by replica technique
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United States of America Patent
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-
Aug 18, 1998
Grant Date -
N/A
app pub date -
Oct 6, 1995
filing date -
Oct 11, 1994
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of manufacturing a microelectronic device includes the steps of: (a) providing a hole in a substrate; (b) forming a first sacrificial film having a slanted side surface on a side wall of the hole; (c) applying a second sacrificial film on the first sacrificial film to fill the hole and form a cusp; (d) forming an electron emitting material layer capable of emitting electrons therefrom under an electric field on the second sacrificial film to fill the cusp to form a tip; and (e) removing the first and second sacrificial films to expose the tip. This method enables to manufacture an electric field emission type device having an emitter tip with a small radius of curvature and small apex angle.
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