Control of chemical-mechanical polishing rate across a substrate surface
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United States of America Patent
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Sep 1, 1998
Grant Date -
N/A
app pub date -
Apr 26, 1996
filing date -
Apr 26, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A technique for controlling a polishing rate across a substrate surface when performing CMP, in order to obtain uniform polishing of the substrate surface. A support housing which underlies a polishing pad includes a plurality of openings for dispensing a pressurized fluid. The openings are arranged into a pre-configured pattern for dispensing the fluid to the underside of the pad opposite the substrate surface being polished. The openings are configured into a number of groupings, in which a separate channel is used for each grouping so that fluid pressure for each group of openings can be separately and independently controlled.
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