Bonded wafer processing
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United States of America Patent
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Sep 1, 1998
Issued Date -
N/A
app pub date -
Apr 14, 1997
filing date -
Jun 17, 1992
priority date (Note) -
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Abstract
Warpage in a bonded wafer is limited by maintenance of a stress compensation layer on the backside of the bonded wafer during device fabrication processing. One embodiment applies a sacrificial polysilicon layer over a stress compensation silicon dioxide layer for bonded silicon wafers. The fabrication processing consumes the polysilicon layer but not the stress compensation silicon dioxide.
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