Multilayer thin film, substrate for electronic device, electronic device, and preparation of multilayer oxide thin film
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United States of America Patent
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Sep 1, 1998
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app pub date -
Jun 14, 1996
filing date -
Aug 4, 1995
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Abstract
A multilayer thin film of the invention has an oxide thin film formed on a semiconductor single crystal substrate, and the oxide thin film includes at least one epitaxial thin film composed mainly of zirconium oxide or zirconium oxide stabilized with a rare earth metal element (inclusive of scandium and yttrium). Included is an oriented thin film formed on the oxide thin film from a dielectric material of perovskite or tungsten bronze type with its c-plane unidirectionally oriented parallel to the substrate surface. Consequently, there are provided a perovskite oxide thin film of (001) orientation, a substrate for an electronic device comprising the thin film, and a method for preparing the thin film.
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