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Abstract

A dynamic random access memory including a cell array for storing data therein, a column address strobe bar buffer for generating at least one internal column address strobe signal in response to one external column address strobe bar signal to select data from the cell array, and an internal column address strobe enable signal generation circuit for generating at least one internal column address strobe enable signal to control the number of internal column address strobe signals from the column address strobe bar buffer. According to the present invention, one external column address strobe bar pin is used to generate internal multiple column address strobe signals. Therefore, the package size can be reduced and the time skew can be avoided. Furthermore, the internal multiple column address strobe signals are selectively enabled.

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First Claim