Saturable absorber Q-switches for 2-.mu.m lasers
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United States of America Patent
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Sep 1, 1998
Grant Date -
N/A
app pub date -
Dec 11, 1995
filing date -
Dec 11, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A laser system includes a laser resonator cavity having a resonant axis and a lasing element within the laser resonator cavity. The lasing element emits, under stimulation, light at a wavelength of from about 1.6 to about 2.3 micrometers. There is a flash lamp, laser diodes or other pumping devices, which optically pump the lasing element to emit laser light. A Q-switch crystal lies along the resonant axis within the laser resonator cavity. The Q-switch crystal is formed of a host material having a concentration of Ho.sup.3+ ions therein, so as to be a saturable absorber of light of a wavelength of about 2.0-2.1 micrometers. The Q-switch crystal is preferably Ho.sup.3+ -doped yttriumlithium-fluoride, or Ho.sup.3+ -doped yttrium-vanadate. In another embodiment, the Q-switch crystal is preferably Cr.sup.2+ :fosterite (Mg.sub.2 SiO.sub.4).
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