Method for producing a channel region layer in a sic-layer for a voltage controlled semiconductor device
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United States of America Patent
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Sep 8, 1998
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app pub date -
Aug 6, 1996
filing date -
Jul 11, 1996
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Abstract
In a method for producing a channel region layer in a SiC-layer for producing a voltage controlled semiconductor device n-type dopants and p-type dopants are implanted into a near-surface layer of the SiC layer. The p-type dopants implanted have a higher diffusion rate in SiC than the n-type dopants implanted. The SiC-layer is then heated at such a temperature that p-type dopants implanted diffuse from the near-surface layer into the surrounding regions of the SiC-layer being lightly n-doped to such a degree that a channel region layer in which p-type dopants dominates is created.
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