Prevention of abnormal WSi.sub.x oxidation by in-situ amorphous silicon deposition
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United States of America Patent
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Sep 8, 1998
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app pub date -
May 3, 1996
filing date -
May 3, 1996
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Abstract
A process which prevents abnormal WSi.sub.x oxidation during subsequent LPCVD insulator deposition and gate sidewall oxidation, uses an in-situ deposition of a thin amorphous silicon layer on top of the tungsten silicide as well as the deposition of an amorphous spacer after gate stack patterning, respectively.
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