Importance

Loading Importance Indicators...

Abstract

An imaging device (10) has a plurality of unit cells that contribute to forming an image of a scene. The imaging device includes a layer of semiconductor material (16), for example silicon, that has low noise photogate charge-mode readout circuitry (20, 21, 26, 28) (e.g., CCD or CMOS readout circuitry and structures) that is disposed upon a first surface (18) of the layer. A second, opposing surface of the layer is a radiation admitting surface of the layer. The layer has a bandgap selected for absorbing electromagnetic radiation having wavelengths shorter than about one micrometer and for generating charge carriers from the absorbed radiation. The generated charge carriers are collected by the photogate charge-mode readout circuitry. A thermal sensing element (22) is disposed above and is thermally isolated from the first surface of the layer. The thermal sensing element may be, by example, one of a bolometer element, a pyroelectric element, or a thermopile element. A layer (12) of narrower bandgap semiconductor material can also be employed with this invention, wherein the layer of narrower bandgap semiconductor material (such as InGaAs or HgCdTe) is atomically bonded to the second surface along a heterojunction interface that is continuous or apertured across the second surface. The bonded layer is used to absorb NIR and visible light.

Loading the Abstract Image...

First Claim