Incandescent light energy conversion with reduced infrared emission

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United States of America Patent

PATENT NO 5814840
SERIAL NO

08469675

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Abstract

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Energy conversion among heat or electricity and incandescent light is achieved, in the case of incandescent light emission, with the emission having reduced IR content, using a high band gap semiconductor element that is tailored in structure and in energy conversion physics to suppress free carrier absorption so as to be transparent or reflecting of photon energy that is below the band gap of the semiconductor and to only emit photon energy above the band gap of the semiconductor. A filament of lightly 'N' doped 3C-SiC, at about 900 degrees C., will incandesce and radiate in the visible range for energies greater than about 2 eV and will exhibit inefficient emission of photons for energies less than about 2 eV.

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Patent Owner(s)

Patent OwnerAddress
PURDUE RESEARCH FOUNDATION101 FOUNDRY DRIVE SUITE 2500 WEST LAFAYETTE IN 47906

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kornegay, Kevin Tyrone West Lafayette, IN 2 42
Spencer, Michael Gregg Washington, DC 1 17
Woodall, Jerry MacPherson West Lafayette, IN 1 17

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