EEPROM flash memory cell, memory device, and process for formation thereof
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United States of America Patent
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Sep 29, 1998
Issued Date -
N/A
app pub date -
Jul 28, 1997
filing date -
Oct 28, 1993
priority date (Note) -
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status (Latency Note)
Importance
Abstract
An EEPROM flash memory cell and a process for formation thereof are disclosed. The EEPROM flash memory cell includes: a source; a drain; a gate insulating layer disposed upon a channel between the source and the drain; a floating gate electrode disposed upon the gate insulating layer and facing toward the channel; and a control gate electrode disposed upon the floating gate electrode across an intermediate insulating layer; and further includes, an erasing electrode for contacting with at least one side of the floating gate electrode at least at one or more spots thereof across a tunneling insulating layer.
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