Transistor and semiconductor device
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United States of America Patent
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Oct 6, 1998
Issued Date -
N/A
app pub date -
Jan 30, 1996
filing date -
May 26, 1993
priority date (Note) -
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Abstract
A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic ?110! axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.
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