Semiconductor integrated circuit device having a ceramic thin film capacitor

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United States of America Patent

PATENT NO 5818079
SERIAL NO

08664217

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Abstract

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A ferroelectric capacitor comprising a lower electrode, a ceramic capacity film made of a ferroelectric substance and an upper electrode is provided on a substrate insulating film formed on a semiconductor substrate. A layer insulating film is formed on the semiconductor substrate so as to cover the ferroelectric capacitor. An electrode wiring is formed on the layer insulating film. A length L of the surface of the ceramic capacity film which is present between an intersection of the side of the upper electrode and the upper face of the ceramic capacity film and an intersection of the side of the ceramic capacity film and the upper face of the lower electrode and a thickness D of the ceramic capacity film have a relationship of L.gtoreq.2D.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD1006 OHAZA KADOMA KADOMA-SHI OSAKA 571-8501

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Noma, Atsushi Osaka, JP 10 62
Ueda, Daisuke Osaka, JP 186 1972

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