Circuit technique for logic integrated DRAM with SIMD architecture and a method for controlling low-power, high-speed and highly reliable operation

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United States of America Patent

PATENT NO 5818788
SERIAL NO

08865968

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Abstract

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In a logic integrated DRAM LSI with SIMD architecture, a intentional clock skew is introduced for both between DRAM blocks and between logic blocks due to reduce the magnitude of peak current, operation frequency and number of I/O are defined for both DRAM blocks (frequency f.sub.M, I/O number m) and logic blocks (frequency f.sub.N, I/O number n) to keep the relation of f.sub.M .times.m=f.sub.N .times.n, address out of order scheme is introduced to achieve a high-speed and low-power DRAM access.

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Patent Owner(s)

Patent OwnerAddress
MASSACHUSETTS INSTITUTE OF TECHNOLOGY77 MASSACHUSETTS AVENUE CAMBRIDGE MA 02139
NEC CORPORATIONMINATO-KU TOKYO 108-8001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kimura, Tohru Kanagawa, JP 116 961
Sodini, Charles G Cambridge, MA 19 1092

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