Multi-layer susceptor for rapid thermal process reactors
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United States of America Patent
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Oct 13, 1998
Issued Date -
N/A
app pub date -
Feb 2, 1996
filing date -
Jan 21, 1993
priority date (Note) -
Expired
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Abstract
A RTP reactor susceptor is a multi-layer structure. A first layer of the RTP susceptor is a thin layer of preferably silicon carbide, graphite, or silicon carbide coated graphite with a thickness less than about 6 mm, with an emissivity such that the first layer radiates heat, and with thermal heat transfer characteristics such that the first layer facilitates maintaining a substrate or substrates supported by the susceptor at a uniform temperature, and facilitates maintaining uniform process gas characteristics over the substrates. A second layer of the susceptor is transparent to the heat source of the RTP reactor and provides a rigid, stable platform for the first layer.
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