Field effect transistor having an arched gate and manufacturing method thereof
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United States of America Patent
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Oct 13, 1998
Grant Date -
N/A
app pub date -
Oct 17, 1996
filing date -
Oct 17, 1996
priority date (Note) -
Expired
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Abstract
An arched gate MOSFET having first and second source/drain regions formed spaced apart on a main surface of the semiconductor substrate, and a gate electrode formed on said main surface of the semiconductor substrate through an insulating film. The gate electrode extends in a first direction between the first and second source/drain regions defining a channel length, and in a second direction, perpendicular to the first direction, defining a channel width. The surface of the semiconductor substrate is arcuate in shape in the channel width direction and the gate electrode conforms to the arcuate shape of the surface of the semiconductor substrate.
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