Compact self-aligned body contact silicon-on-insulator transistor
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United States of America Patent
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Oct 13, 1998
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N/A
app pub date -
May 20, 1996
filing date -
May 20, 1996
priority date (Note) -
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Abstract
A field effect transistor structure having a first type conductivity semiconductor body disposed on an insulator and having formed in different regions of the semiconductor, a source region and a drain region of the opposite type conductivity to the first type, a gate electrode adapted to control a flow of carriers in a channel through the semiconductor body between the source and drain regions, and a Schottky diode contact region between the semiconductor body and one of the source or the drain regions. With such an arrangement, the Schottky diode, when forward biased provides a fixed voltage, about 0.3 volts, between the semiconductor body and one of the source or the drain regions.
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