Encapsulated capacitor structure having a dielectric interlayer

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United States of America Patent

PATENT NO 5822175
SERIAL NO

08946947

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Abstract

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An encapsulated capacitor structure and method for fabricating same. The capacitor structure is created by selectively depositing a lower electrode, a dielectric thin film of BST or other ferrodielectric, and an upper electrode, onto a substrate, and subsequently depositing a conformal layer of a non-reductively deposited dielectric material. Contact windows are then opened through the encapsulating layer for contacting the capacitor electrodes. The underlying structure is protected by the encapsulating layer from metal deposition and post-processing which would otherwise damage the structure.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRONICS CORPORATION1-1 SAIWAI-CHO TAKATSUKI-SHI OSAKA 569

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Azuma, Masamichi Colorado Springs, CO 45 688

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