Composite memory material comprising a mixture of phase-change memory material and dielectric material
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United States of America Patent
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Oct 20, 1998
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Oct 28, 1996
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Oct 28, 1996
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Abstract
A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.
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