Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
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United States of America Patent
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Nov 3, 1998
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N/A
app pub date -
Jul 22, 1996
filing date -
Jun 7, 1995
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Abstract
A vertically oriented diode for use in delivering current to a multi-state memory element in a memory cell. A vertical diode may be disposed in a diode container extending downwardly from a top of a silicon or oxide layer, and may be formed of a combination of silicon and/or metal layers disposed proximate to inner surfaces of a diode container. A multi-state memory element may be formed of a multi-state material, such as a chalcogenide, above a diode to complete a memory cell.
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