Method for making III-Nitride laser and detection device
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United States of America Patent
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Nov 10, 1998
Grant Date -
N/A
app pub date -
Oct 17, 1996
filing date -
Oct 17, 1996
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A p-i-n structure for use in photoconductors and diodes is disclosed, being formed of an Al.sub.x Ga.sub.1-x N alloy (X=0.fwdarw.1) with In.sub.y Ga.sub.1-Y N (Y=0.fwdarw.1) which as grown by MOCVD procedure with the p-type layer adjacent the substrate. In the method of the subject invention, buffer layers of p-type material are grown on a substrate and then doped. The active, confinement and cap layers of n-type material are next grown and doped. The structure is masked and etched as required to expose a surface which is ion implanted and annealed. A p-type surface contact is formed on this ion-implanted surface which is of sufficiently low resistance as to provide good quality performance for use in a device.
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