Method for optimal crystallization to obtain high electrical performance from chalcogenides
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 17, 1998
Issued Date -
N/A
app pub date -
Nov 1, 1995
filing date -
Nov 1, 1995
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of fabricating a chalcogenide memory cell wherein a layer of chalcogenide material is deposited in an amorphous state. The layer of amorphous chalcogenide material is then etched to its final geometry while maintaining its amorphous structure. The final geometry of the chalcogenide material is then annealed thereby transforming it to a crystalline form.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully