Method for stabilizing polysilicon resistors
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United States of America Patent
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Nov 17, 1998
Grant Date -
N/A
app pub date -
Dec 7, 1995
filing date -
Dec 7, 1995
priority date (Note) -
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Abstract
A method for stabilizing a polysilicon resistor. Formed through a conventional method upon a semiconductor substrate is a polysilicon resistor. The polysilicon resistor is treated with a nitrogen plasma. After treatment with the nitrogen plasma, the polysilicon resistor exhibits a high and stable resistance having minimal susceptibility to variation due to intrusion of hydrogen or other reactive species into the polysilicon resistor.
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