Method for patterning a layer on oxide superconductor thin film and superconducting device manufactured thereby
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United States of America Patent
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Nov 24, 1998
Issued Date -
N/A
app pub date -
Apr 5, 1995
filing date -
Dec 13, 1991
priority date (Note) -
Expired
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Abstract
A method for patterning an oxide superconductor thin film, comprising a step of forming a SiO.sub.2 layer on the oxide superconductor thin film, patterning the SiO.sub.2 layer so as to form the same pattern as that of the oxide superconductor thin film which will be patterned, etching the oxide superconductor thin film by using the patterned SiO.sub.2 layer as a mask, and removing the SiO.sub.2 layer by using a weak HF solution, a buffer solution including HF or a mixture including HF.
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