Two-step process for cleaning a substrate processing chamber
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United States of America Patent
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Dec 1, 1998
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N/A
app pub date -
Mar 3, 1997
filing date -
Mar 3, 1997
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Abstract
A method for removing particles from an interior surface of a processing chamber using a two-step cleaning process. The method includes introducing a first cleaning process gas into the processing chamber, applying energy to that first cleaning process gas to remove particles from the processing chamber's interior surface, and introducing a second cleaning process gas into the processing chamber to remove a cleaning residue formed by a reaction between the first cleaning process gas and the processing chamber's interior surface. Removing or gettering the cleaning residue from the chamber wall improves the quality of the wafers formed in the process.
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